Improvement of Resistive Switching Uniformity by Introducing a Thin NbOx Interface Layer

Uniformity is by far an important issue for the application of resistive random access memory (RRAM). In this letter, we explore a prototype RRAM device for switching uniformity improvement. Compared to W/WO3−x/Pt structure, after the introduction of a thin NbOx film between WO3−x and Pt bottom electrode, the device exhibits much better resistive hysteresis and switching uniformity. The main composition of the interface layer is NbO2 suboxide showing insulator-metal phase transition. A combined filamentary conduction model is proposed to clarify the role of NbOx layer on the resistive switching stabilization during the forming process.