Effect of Nitrogen Doping on Variability of TaOx -RRAM for Low-Power 3-Bit MLC Applications

Effect of Nitrogen Doping on Variability of TaOx -RRAM for Low-Power 3-Bit MLC Applications

The switching uniformity and reliability of the TaOx based resistive random access memory (RRAM) device were investigated with varying nitrogen doping concentration. The nitrogen doped samples shows excellent electrical and reliability characteristics such as small switching variability for 3-bit mu...

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Veröffentlicht in:ECS solid state letters 2015-01, Vol.4 (3), p.P25-P28
Hauptverfasser: Misha, Saiful Haque, Tamanna, Nusrat, Woo, Jiyong, Lee, Sangheon, Song, Jeonghwan, Park, Jaesung, Lim, Seokjae, Park, Jaehyuk, Hwang, Hyunsang
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Sprache:eng
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Zusammenfassung:The switching uniformity and reliability of the TaOx based resistive random access memory (RRAM) device were investigated with varying nitrogen doping concentration. The nitrogen doped samples shows excellent electrical and reliability characteristics such as small switching variability for 3-bit multilevel per cell (MLC), low power operation and good retention properties. Compared with control sample, improved device characteristics of nitrogen doped device can be explained by nitrogen induced filament confinement.
ISSN:2162-8742
2162-8750
DOI:10.1149/2.0011504ssl