SRAF Optimization for sub-40nm Technology Node Contact Patterning

As 193nm immersion lithography is extended to sub-40nm technology node, how to define a single-pass contact hole patterning process with enough common lithography process window is a very challenging task. Sub-resolution assist features (SRAF) optimization is one crucial step besides illumination op...

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Bibliographische Detailangaben

Hauptverfasser:	Wang, Benny, Zhang, Jasmine, Zhu, Yu, Huang, Vincent, Cheng, Johnny, Liu, Qingwei, Shi, Xuelong, Gu, Yiming, Zhang, Recco
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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