Fabrication of Si1-xSnx Layer on Si Substrate by Screen-Printing of Al-Sn Paste

Single-crystalline Si1-xSnx thick layers on large area Si substrates are fabricated by applying Al-Sn paste using conventional screen-printing process and high temperature treatment step. The impact of the Al and Sn ratio in the Al-Sn pastes are investigated. From the XRD patterns, the crystalline S...

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Hauptverfasser: Nakahara, Masahiro, Matsubara, Moeko, Tsuji, Kosuke, Suzuki, Shota, Dhamrin, Marwan, Usami, Noritaka
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:Single-crystalline Si1-xSnx thick layers on large area Si substrates are fabricated by applying Al-Sn paste using conventional screen-printing process and high temperature treatment step. The impact of the Al and Sn ratio in the Al-Sn pastes are investigated. From the XRD patterns, the crystalline Si1-xSnx peak has been detected and the Sn content in the Si1-xSnx films is increased with increasing annealing temperature reaching approximately 0.35% at 900°C.
ISSN:1938-5862
1938-6737
DOI:10.1149/09301.0061ecst