(Invited) Metallic Contamination Issues in Advanced Semiconductor Processing

We have extensively reviewed metallic contamination issues including the detection, analysis, prevention, and gettering in advanced semiconductor device manufacturing. Detection and analysis of metallic contamination on the III-V surfaces used for high mobility channels in logic devices will be grea...

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Bibliographische Detailangaben
1. Verfasser: Saga, Koichiro
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:We have extensively reviewed metallic contamination issues including the detection, analysis, prevention, and gettering in advanced semiconductor device manufacturing. Detection and analysis of metallic contamination on the III-V surfaces used for high mobility channels in logic devices will be great challenges. Better understanding the penetration, diffusion, and gettering behaviors of metal impurities and the gettering design based on the physical properties of metals are required for controlling yield of memory devices, image sensors and high voltage transistors.
ISSN:1938-5862
1938-6737
1938-6737
1938-5862
DOI:10.1149/08610.0113ecst