Using Ellipsoidal Layout Style to Boost the Electrical Performance of the MOSFETs Regarding the 180 nm CMOS ICs Manufacturing Process

This paper aims to experimentally study the influence of the ellipsoidal layout style in MOSFETs in comparison to the standard MOSFETs (rectangular gate shape) regarding the 180 nm CMOS ICs Manufacturing Process from TSMC. The obtained results show that the electrical performance of the main electrical parameters and figures of merit of the Ellipsoidal MOSFETs are further improved when we compare with those observed regarding technological nodes less sophisticated due to the innovative effects (LCE and PAMDLE) that occur simultaneously in this innovative MOSFET structure.