GaN Based Ethanol Sensor
Silver Schottky diode on AlGaN/GaN high electron mobility transistor structure was investigated for the application of ethanol sensing. The device showed the decrease of current upon ethanol exposure from the measurement temperature of 200˚C due to the increase in Schottky barrier height. At 250˚C,...
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| Format: | Tagungsbericht |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | Silver Schottky diode on AlGaN/GaN high electron mobility transistor structure was investigated for the application of ethanol sensing. The device showed the decrease of current upon ethanol exposure from the measurement temperature of 200˚C due to the increase in Schottky barrier height. At 250˚C, the stable and fast current changes depending on the exposed ethanol concentrations from 0.0058 to 5.8% were observed. |
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| ISSN: | 1938-5862 1938-6737 1938-6737 1938-5862 |
| DOI: | 10.1149/07540.0009ecst |