High Thermal Stability of Tensile Strained Direct Gap GeSn Crystallized on Amorphous Layers

In this paper, we systematically research the thermal evolution of substitutional Sn composition, tensile strain, and the direct band gap of highly (111) textured, direct gap Ge1-xSnx (0.075

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Hauptverfasser: Li, Haofeng, Cuervo Covian, Alejandra, Wang, Xiaoxin, Liu, Jifeng
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:In this paper, we systematically research the thermal evolution of substitutional Sn composition, tensile strain, and the direct band gap of highly (111) textured, direct gap Ge1-xSnx (0.075
ISSN:1938-5862
1938-6737
DOI:10.1149/07508.0623ecst