Ω-Gate Nanowire P-FET with cSiGe Channel Epitaxied on Strained-SOI Substrates
We present for the first time the successful fabrication of Ω-gate P-type FETs with epitaxial compressively-strained SiGe (Ge=30%) on tensily-strained SOI substrates. The recess down to the strained-Si etch-stop layer in the source/drain (S/D) areas (after spacer etching) followed by a selective epi...
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| creator | Nguyen, Phuong Barraud, Sylvain Cassé, Mikael Pelloux-Prayer, Johan Tabone, Claude Hartmann, Jean-Michel Arvet, Christian Bernier, Nicolas Hutin, Louis Ecarnot, Ludovic Maleville, Christophe Nguyen, Bich-Yen Mazure, Carlos Faynot, Oliver Vinet, Maud |
| description | We present for the first time the successful fabrication of Ω-gate P-type FETs with epitaxial compressively-strained SiGe (Ge=30%) on tensily-strained SOI substrates. The recess down to the strained-Si etch-stop layer in the source/drain (S/D) areas (after spacer etching) followed by a selective epitaxy of in-situ boron-doped Si0.7Ge0.3 raised S/Ds allowed us to offset the performance loss due to tensile strain in short gate length Si0.7Ge0.3/sSi NW devices. The hole mobility improvement resulting from the compressive strain and VTH shift between Si0.7Ge0.3/sSi and Si channel transistors led to an ION current improvement of +100% at LG=15nm compared to SOI, providing a promising path for performant CMOS integration. |
| doi_str_mv | 10.1149/07508.0059ecst |
| format | Conference Proceeding |
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| identifier | ISSN: 1938-5862 |
| ispartof | ECS transactions, 2016, Vol.75 (8), p.59-65 |
| issn | 1938-5862 1938-6737 |
| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Ω-Gate Nanowire P-FET with cSiGe Channel Epitaxied on Strained-SOI Substrates |
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