(Invited) Evaluation of Few-Layer MoS2 Transistors with a Top Gate and HfO2 Dielectric

Top-gated, few-layer MoS2 transistors with a HfO2 gate dielectric are fabricated and subsequently characterized. Both transistor performance and gate-stack interface quality were characterized with current - voltage (I-V) and capacitance - voltage (C-V) measurements. The interface state density (Dit...

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Hauptverfasser:	Young, Chadwin D, Zhao, Peng, Bolshakov-Barrett, Pavel, Azcatl, Angelica, Hurley, P. K., Gomeniuk, Y. Y., Schmidt, Michael, Hinkle, Christopher L, Wallace, Robert M
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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