(Invited) Evaluation of Few-Layer MoS2 Transistors with a Top Gate and HfO2 Dielectric

Top-gated, few-layer MoS2 transistors with a HfO2 gate dielectric are fabricated and subsequently characterized. Both transistor performance and gate-stack interface quality were characterized with current - voltage (I-V) and capacitance - voltage (C-V) measurements. The interface state density (Dit) was extracted and analyzed. The importance of annealing before high-k deposition to reduce the leakage current of the HfO2 gate oxide was shown. Finally, we show preliminary data of HfO2 on MoSe2 to show the possibility of extending this top-gate approach to other TMDs.