Growth of GaN/InGaN Films and Heterostructures Via Super-Atmospheric MOCVD
In the interest of improving crystalline quality and optical performance of MOCVD grown semiconductors a unique super-atmospheric reactor was designed and fabricated. This reactor has since been used to fabricate GaN/InGaN multi-quantum-well heterostructures under superatmospheric growth conditions....
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| Hauptverfasser: | , |
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| Format: | Tagungsbericht |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | In the interest of improving crystalline quality and optical performance of MOCVD grown semiconductors a unique super-atmospheric reactor was designed and fabricated. This reactor has since been used to fabricate GaN/InGaN multi-quantum-well heterostructures under superatmospheric growth conditions. The resulting samples were analyzed through in-situ and ex-situ measurements. |
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| ISSN: | 1938-5862 1938-6737 |
| DOI: | 10.1149/07205.0041ecst |