Nanoscale Etching: Dissolution of III-As and Ge in HCl/H2O2 Solutions

In this work the etching kinetics of (100) III-As is studied at the nanoscale with ICP-MS for various HCl/H2O2 mixtures. It is shown that the etch rate is controlled by both the concentration of the acid and the oxidizing agent. The surface termination during etching has strong impact on the etching...

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Hauptverfasser:	van Dorp, Dennis H., Weinberger, David, Van Wonterghem, Simon, Arnauts, Sophia, Strubbe, Katrien, Holsteyns, Frank, De Gendt, Stefan
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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