Nanoscale Etching: Dissolution of III-As and Ge in HCl/H2O2 Solutions

Nanoscale Etching: Dissolution of III-As and Ge in HCl/H2O2 Solutions

In this work the etching kinetics of (100) III-As is studied at the nanoscale with ICP-MS for various HCl/H2O2 mixtures. It is shown that the etch rate is controlled by both the concentration of the acid and the oxidizing agent. The surface termination during etching has strong impact on the etching...

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Hauptverfasser: van Dorp, Dennis H., Weinberger, David, Van Wonterghem, Simon, Arnauts, Sophia, Strubbe, Katrien, Holsteyns, Frank, De Gendt, Stefan
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:In this work the etching kinetics of (100) III-As is studied at the nanoscale with ICP-MS for various HCl/H2O2 mixtures. It is shown that the etch rate is controlled by both the concentration of the acid and the oxidizing agent. The surface termination during etching has strong impact on the etching kinetics. A similar effect was observed for Ge. The Ge (100) surface is sensitive to surface roughening during etching and reoxidation after native oxide removal.
ISSN:1938-5862
1938-6737
DOI:10.1149/06908.0235ecst