Novel Electrostatically Doped Planar Field-Effect Transistor for High Temperature Applications
In this paper, we investigate by simulation and by evaluation of experimental data the feasibility of an electrostatically doped and therefore voltage-programmable, planar, CMOS-compatible field-effect-transistor (FET) structure which is based on our already published Si-nanowire (SiNW) technology....
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| Veröffentlicht in: | ECS transactions 2014-08, Vol.64 (12), p.11-24 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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