Highly-Doped, Highly-Strained Germanium and Schottky Electroluminescent Diodes

We demonstrate that room temperature electroluminescence can be obtained from n-doped germanium layers by using a Schottky contact. The electrical and optical properties of the Schottky device are improved by inserting a thin Al2O3 interfacial barrier. We also show that high active doping of Ge grown on Si can be obtained by molecular beam epitaxy by using a co-doping method with Sb and P. We finally discuss the transfer of tensile strain on microdisk resonators using silicon nitride stressor layers.