Investigation of Traps in AlGaN/GaN HEMTs by Sub-Bandgap Optical Pumping under DC and Gate-Lag Measurement

We investigated the traps affecting 2DEG density in AlGaN/GaN HEMTs by sub-bandgap optical pump. Based on the fact that the band bending can alter due to the variation in the density of trapped charge at heterostructure, new transition is proposed to explain the phenomenon. The density change in the trapped charges before and after semi-on state stress at VDS=20V and VGS=-2V with the ambient temperature of 80℃ can also be estimated.