The Improvement of FN Degradation in 3-Dimension TR

Recently, there are many unexpected problems in short channel device. Among these problems, FN degradation has been a serious problem that induces reliability failure in the device as the thickness of gate oxide becomes thinner. Various solutions to solve this problem have been considered, especially in this paper you can confirm the result that FN degradation can be solved by improving fin structure and adjusting the condition of TiN deposition. It is assumed that fin structure is important to reduce leakage current and the control of grain size is helpful to decrease fixed charges generation. These methods are very useful solutions without current loss in the short channel device.