Fabrication of a Vertical Nanogap for Nonvolatile Memories

As one of the candidates of a next-generation memory, we study the memory element using resistance change of the metal nanogap. Since this element has many advantages, for example, quite simple structure, wide material selectivity, high-speed programing, and high temperature tolerance. In this report, to realize miniaturization and mass production, vertical type nanogap elements were developed. As a result of measurements, the characteristic of vertical type is better than the element of lateral type. We studied switching speed of the elements and confirmed that the switching speed is under 50 ns.