Contact engineering for organic CMOS circuits

Organic field-effect transistors (OFETs) have been widely studied, but there are still challenges to achieving large-scale integration in organic complementary metal–oxide–semiconductor (CMOS) circuits. In this article, we discuss the issues on organic CMOS circuits from a device perspective. Our discussion begins with a systematic analysis of the principal parameters of the building block, a CMOS inverter, including gain, noise margin, and power dissipation, as well as the relevant challenges and the potential solutions. We then review state-of-the-art organic CMOS inverters and their fabrications. Finally, we focus on the approaches to optimize organic CMOS circuits from a specific point of view of the contact engineering, particularly for N-type OFETs.