Cadmium stannate conductive layer with high optical transmittance and tunable work function
200 nm cadmium stannate (Cd 2 SnO 4 ) transparent conductive layer films with a sheet resistance of 6.35 Ω/sq and resistivity of 1.27 × 10 −4 Ω · cm are deposited by magnetron sputtering coupling with adjustable target bias voltage followed by 620 °C 30 min annealing. The lowest resistivity of Cd 2...
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Veröffentlicht in: | Materials research express 2021-01, Vol.8 (1), p.16410 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | 200 nm cadmium stannate (Cd
2
SnO
4
) transparent conductive layer films with a sheet resistance of 6.35 Ω/sq and resistivity of 1.27 × 10
−4
Ω · cm are deposited by magnetron sputtering coupling with adjustable target bias voltage followed by 620 °C 30 min annealing. The lowest resistivity of Cd
2
SnO
4
films reported before was 1.28 × 10
−4
Ω · cm, achieved with 510 nm Cd
2
SnO
4
. The average transmission rate of 200 nm sputtering Cd
2
SnO
4
films between 400–800 nm is 94%. The deposition rate increase target bias voltage can the and electrical performance of Cd
2
SnO
4
films. The surface work function of Cd
2
SnO
4
films is also tunable by target bias voltage. The Cd
2
SnO
4
phonon spectrum and phonon density of states combined with Raman microscope shows the Cd
2
SnO
4
films with most ideal electric properties has a identical phonon response. XPS shows the chemical component of as-deposited Cd
2
SnO
4
films and Cd
2
SnO
4
films after annealing with 120 V target bias voltage is Cd
2.03
SnO
6.36
and Cd
1.25
SnO
4.15
, respectively, which is contrary to the general conclusions that interstitial cadmium atoms and oxygen vacancies are the main self-doping defects in Cd
2
SnO
4
films. |
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ISSN: | 2053-1591 2053-1591 |
DOI: | 10.1088/2053-1591/abdcbb |