Helicity-dependent photoconductance of the edge states in the topological insulator Bi2Te3
The helicity-dependent photoconductance of the edge states in three-dimensional topological insulator Bi2Te3 films is investigated.It is revealed that the helicity-dependent photoconductivity current on the left edge of the Bi2Te3 film shows an opposite sign with that on the right edge.In addition,t...
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| Veröffentlicht in: | Chinese physics B 2023-08, Vol.32 (8), p.425-431 |
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| creator | Zhou, Yuchao Yu, Jinling Chen, Yonghai Lai, Yunfeng Cheng, Shuying |
| description | The helicity-dependent photoconductance of the edge states in three-dimensional topological insulator Bi2Te3 films is investigated.It is revealed that the helicity-dependent photoconductivity current on the left edge of the Bi2Te3 film shows an opposite sign with that on the right edge.In addition,the helicity-dependent photoconductivity current increases linearly with the applied longitudinal electric field,and it reverses the sign with the reversal of the electric field.As the thickness of the Bi2Te3 film increases,the helicity-dependent photoconductivity current also increases.Theoretical analysis suggests that the helicity-dependent photo-conductivity current may come from the intrinsic spin orbit coupling(SOC)or the SOC introduced by the chiral impurities or defects. |
| doi_str_mv | 10.1088/1674-1056/acc3fb |
| format | Article |
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B</addtitle><description>The helicity-dependent photoconductance of the edge states in three-dimensional topological insulator Bi2Te3 films is investigated.It is revealed that the helicity-dependent photoconductivity current on the left edge of the Bi2Te3 film shows an opposite sign with that on the right edge.In addition,the helicity-dependent photoconductivity current increases linearly with the applied longitudinal electric field,and it reverses the sign with the reversal of the electric field.As the thickness of the Bi2Te3 film increases,the helicity-dependent photoconductivity current also increases.Theoretical analysis suggests that the helicity-dependent photo-conductivity current may come from the intrinsic spin orbit coupling(SOC)or the SOC introduced by the chiral impurities or defects.</description><subject>edge states</subject><subject>helicity-dependent photoconductance</subject><subject>spin orbit coupling</subject><issn>1674-1056</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNpFkD1PwzAURT2ARCnsjN5YCH2OY8cZoQKKVImlLCyWY7-kriI7alxV8OtJCYLpSldH7-MQcsPgnoFSCybLImMg5MJYy5v6jMz-qgtyOQw7AMkg5zPyscLOW58-M4c9Boch0X4bU7QxuINNJliksaFpixRdi3RIJuFAffipUuxjF1tvTTdWw6EzKe7po883yK_IeWO6Aa9_c07en582y1W2fnt5XT6sM5_nRcqquqg4lMqOB4HgEgsHWKucWye5rJ0sqzFVKYQxZY3WCFk4p6AQXDlrGj4nt9PcowmNCa3excM-jBv1V3vsNObjo6BAsJG8m0gf-3-KgT5Z0ydF-qRIT9b4N1UuYwA</recordid><startdate>20230801</startdate><enddate>20230801</enddate><creator>Zhou, Yuchao</creator><creator>Yu, Jinling</creator><creator>Chen, Yonghai</creator><creator>Lai, Yunfeng</creator><creator>Cheng, Shuying</creator><general>Chinese Physical Society and IOP Publishing Ltd</general><general>Institute of Micro/Nano Devices and Solar Cells,School of Physics and Information Engineering,Fuzhou University,Fuzhou 350108,China%Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China</general><general>Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering,Changzhou University,Changzhou 213164,China</general><general>College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China%Institute of Micro/Nano Devices and Solar Cells,School of Physics and Information Engineering,Fuzhou University,Fuzhou 350108,China</general><scope>2B.</scope><scope>4A8</scope><scope>92I</scope><scope>93N</scope><scope>PSX</scope><scope>TCJ</scope></search><sort><creationdate>20230801</creationdate><title>Helicity-dependent photoconductance of the edge states in the topological insulator Bi2Te3</title><author>Zhou, Yuchao ; Yu, Jinling ; Chen, Yonghai ; Lai, Yunfeng ; Cheng, Shuying</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i224t-9b493078c1020536e4d0eb823cd636bd6796368755aa7beca564dd804538dcaf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>edge states</topic><topic>helicity-dependent photoconductance</topic><topic>spin orbit coupling</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhou, Yuchao</creatorcontrib><creatorcontrib>Yu, Jinling</creatorcontrib><creatorcontrib>Chen, Yonghai</creatorcontrib><creatorcontrib>Lai, Yunfeng</creatorcontrib><creatorcontrib>Cheng, Shuying</creatorcontrib><collection>Wanfang Data Journals - Hong Kong</collection><collection>WANFANG Data Centre</collection><collection>Wanfang Data Journals</collection><collection>万方数据期刊 - 香港版</collection><collection>China Online Journals (COJ)</collection><collection>China Online Journals (COJ)</collection><jtitle>Chinese physics B</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhou, Yuchao</au><au>Yu, Jinling</au><au>Chen, Yonghai</au><au>Lai, Yunfeng</au><au>Cheng, Shuying</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Helicity-dependent photoconductance of the edge states in the topological insulator Bi2Te3</atitle><jtitle>Chinese physics B</jtitle><addtitle>Chin. Phys. B</addtitle><date>2023-08-01</date><risdate>2023</risdate><volume>32</volume><issue>8</issue><spage>425</spage><epage>431</epage><pages>425-431</pages><issn>1674-1056</issn><abstract>The helicity-dependent photoconductance of the edge states in three-dimensional topological insulator Bi2Te3 films is investigated.It is revealed that the helicity-dependent photoconductivity current on the left edge of the Bi2Te3 film shows an opposite sign with that on the right edge.In addition,the helicity-dependent photoconductivity current increases linearly with the applied longitudinal electric field,and it reverses the sign with the reversal of the electric field.As the thickness of the Bi2Te3 film increases,the helicity-dependent photoconductivity current also increases.Theoretical analysis suggests that the helicity-dependent photo-conductivity current may come from the intrinsic spin orbit coupling(SOC)or the SOC introduced by the chiral impurities or defects.</abstract><pub>Chinese Physical Society and IOP Publishing Ltd</pub><doi>10.1088/1674-1056/acc3fb</doi><tpages>7</tpages></addata></record> |
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| subjects | edge states helicity-dependent photoconductance spin orbit coupling |
| title | Helicity-dependent photoconductance of the edge states in the topological insulator Bi2Te3 |
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