Helicity-dependent photoconductance of the edge states in the topological insulator Bi2Te3

The helicity-dependent photoconductance of the edge states in three-dimensional topological insulator Bi2Te3 films is investigated.It is revealed that the helicity-dependent photoconductivity current on the left edge of the Bi2Te3 film shows an opposite sign with that on the right edge.In addition,t...

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Veröffentlicht in:Chinese physics B 2023-08, Vol.32 (8), p.425-431
Hauptverfasser: Zhou, Yuchao, Yu, Jinling, Chen, Yonghai, Lai, Yunfeng, Cheng, Shuying
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Sprache:eng
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Zusammenfassung:The helicity-dependent photoconductance of the edge states in three-dimensional topological insulator Bi2Te3 films is investigated.It is revealed that the helicity-dependent photoconductivity current on the left edge of the Bi2Te3 film shows an opposite sign with that on the right edge.In addition,the helicity-dependent photoconductivity current increases linearly with the applied longitudinal electric field,and it reverses the sign with the reversal of the electric field.As the thickness of the Bi2Te3 film increases,the helicity-dependent photoconductivity current also increases.Theoretical analysis suggests that the helicity-dependent photo-conductivity current may come from the intrinsic spin orbit coupling(SOC)or the SOC introduced by the chiral impurities or defects.
ISSN:1674-1056
DOI:10.1088/1674-1056/acc3fb