Helicity-dependent photoconductance of the edge states in the topological insulator Bi2Te3
The helicity-dependent photoconductance of the edge states in three-dimensional topological insulator Bi2Te3 films is investigated.It is revealed that the helicity-dependent photoconductivity current on the left edge of the Bi2Te3 film shows an opposite sign with that on the right edge.In addition,t...
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Veröffentlicht in: | Chinese physics B 2023-08, Vol.32 (8), p.425-431 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The helicity-dependent photoconductance of the edge states in three-dimensional topological insulator Bi2Te3 films is investigated.It is revealed that the helicity-dependent photoconductivity current on the left edge of the Bi2Te3 film shows an opposite sign with that on the right edge.In addition,the helicity-dependent photoconductivity current increases linearly with the applied longitudinal electric field,and it reverses the sign with the reversal of the electric field.As the thickness of the Bi2Te3 film increases,the helicity-dependent photoconductivity current also increases.Theoretical analysis suggests that the helicity-dependent photo-conductivity current may come from the intrinsic spin orbit coupling(SOC)or the SOC introduced by the chiral impurities or defects. |
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ISSN: | 1674-1056 |
DOI: | 10.1088/1674-1056/acc3fb |