A 4×4 metal-semiconductor-metal rectangular deep-ultraviolet detector array of Ga2O3 photoconductor with high photo response

A 4×4 beta-phase gallium oxide(β-Ga2O3)deep-ultraviolet(DUV)rectangular 10-fingers interdigital metal-semiconductor-metal(MSM)photodetector array of high photo responsivity is introduced.The Ga2O3 thin film is prepared through the metalorganic chemical vapor deposition technique,then used to construct the photodetector array via pho-tolithography,lift-off,and ion beam sputtering methods.The one photodetector cell shows dark current of 1.94 pA,photo-to-dark current ratio of 6×107,photo responsivity of 634.15 A·W-1,specific detectivity of 5.93×1011 cm·Hz1/2.W-1(Jones),external quantum efficiency of 310000％,and linear dynamic region of 108.94 dB,indicating high performances for DUV photo detection.Furthermore,the 16-cell photodetector array displays uniform performances with decent devia-tion of 19.6％for photo responsivity.