Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure Project supported by the Key-Area Research and Development Program of Guangdong Province, China (Grant Nos. 2020B010174001 and 2020B010171002), the Ningbo Science and Technology Innovation Program 2025 (Grant No. 2019B10123), and the National Natural Science Foundation of China (Grant No. 62074122)

Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure Project supported by the Key-Area Research and Development Program of Guangdong Province, China (Grant Nos. 2020B010174001 and 2020B010171002), the Ningbo Science and Technology Innovation Program 2025 (Grant No. 2019B10123), and the National Natural Science Foundation of China (Grant No. 62074122)

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Veröffentlicht in:Chinese physics B 2021-08, Vol.30 (8)
Hauptverfasser: Li, Ruo-Han, Fei, Wu-Xiong, Tang, Rui, Wu, Zhao-Xi, Duan, Chao, Zhang, Tao, Zhu, Dan, Zhang, Wei-Hang, Zhao, Sheng-Lei, Zhang, Jin-Cheng, Hao, Yue
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enhancement mode (E-mode)
p-channel GaN MOSFETs
threshold voltage
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creator Li, Ruo-Han
Fei, Wu-Xiong
Tang, Rui
Wu, Zhao-Xi
Duan, Chao
Zhang, Tao
Zhu, Dan
Zhang, Wei-Hang
Zhao, Sheng-Lei
Zhang, Jin-Cheng
Hao, Yue
description
doi_str_mv 10.1088/1674-1056/ac0793
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subjects enhancement mode (E-mode)
p-channel GaN MOSFETs
threshold voltage
title Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure Project supported by the Key-Area Research and Development Program of Guangdong Province, China (Grant Nos. 2020B010174001 and 2020B010171002), the Ningbo Science and Technology Innovation Program 2025 (Grant No. 2019B10123), and the National Natural Science Foundation of China (Grant No. 62074122)
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