Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure Project supported by the Key-Area Research and Development Program of Guangdong Province, China (Grant Nos. 2020B010174001 and 2020B010171002), the Ningbo Science and Technology Innovation Program 2025 (Grant No. 2019B10123), and the National Natural Science Foundation of China (Grant No. 62074122)

Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure Project supported by the Key-Area Research and Development Program of Guangdong Province, China (Grant Nos. 2020B010174001 and 2020B010171002), the Ningbo Science and Technology Innovation Program 2025 (Grant No. 2019B10123), and the National Natural Science Foundation of China (Grant No. 62074122)

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Veröffentlicht in:Chinese physics B 2021-08, Vol.30 (8)
Hauptverfasser: Li, Ruo-Han, Fei, Wu-Xiong, Tang, Rui, Wu, Zhao-Xi, Duan, Chao, Zhang, Tao, Zhu, Dan, Zhang, Wei-Hang, Zhao, Sheng-Lei, Zhang, Jin-Cheng, Hao, Yue
Format: Artikel
Sprache:eng
Schlagworte:
enhancement mode (E-mode)
p-channel GaN MOSFETs
threshold voltage
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ISSN:1674-1056
DOI:10.1088/1674-1056/ac0793