Visualization of tunnel magnetoresistance effect in single manganite nanowiresProject supported by the National Key Research and Development Program of China (Grant No. 2016YFA0300702), Shanghai Municipal Natural Science Foundation, China (Grant Nos. 19ZR1402800, 18JC1411400, 18ZR1403200, and 17ZR1442600), the Program of Shanghai Academic Research Leader, China (Grant Nos. 18XD1400600 and 17XD1400400), and the China Postdoctoral Science Foundation (Grant Nos. 2016M601488 and 2017T100265)

We reported a study of tunnel magnetoresistance (TMR) effect in single manganite nanowire via the combination of magnetotransport and magnetic force microscopy imaging. TMR value up to 290% has been observed in single (La1 − yPry)1 − xCaxMnO3 nanowires with varying width. We find that the TMR effect can be explained in the scenario of opening and blockade of conducting channels from inherent magnetic domain evolutions. Our findings provide a new route to fabricate TMR junctions and point towards future improvements in complex oxide-based TMR spintronics.