Charge trapping memory device based on the Ga2O3 films as trapping and blocking layer Project supported by the National Natural Science Foundation of China (Grant Nos. 61674050 and 61874158), the Top-notch Youth Project in Hebei Province, China (Grant No. BJ2014008), the Outstanding Youth Project of Hebei Province, China (Grant No. F2016201220), the Outstanding Youth Cultivation Project of Hebei University, China (Grant No. 2015JQY01), the Project of Science and Technology Activities for Oversea

We present a new charge trapping memory (CTM) device with the Au/Ga2O3/SiO2/Si structure, which is fabricated by using the magnetron sputtering, high-temperature annealing, and vacuum evaporation techniques. Transmission electron microscopy diagrams show that the thickness of the SiO2 tunneling layer can be controlled by the annealing temperature. When the devices are annealed at 760 °C, the measured C-V hysteresis curves exhibit a maximum 6 V memory window under a ±13 V sweeping voltage. In addition, a slight degradation of the device voltage and capacitance indicates the robust retention properties of flat-band voltage and high/low state capacitance. These distinctive advantages are attributed to oxygen vacancies and inter-diffusion layers, which play a critical role in the charge trapping process.