IR femtochemistry on the surface of wide-gap ionic crystals

We have found and studied a phenomenon of the growth of films resulting from decomposition of some organic and silicon-containing molecules adsorbed on the surface of ionic crystals under the action of IR (1.4-5.4 µm) femtosecond radiation of a moderate intensity, ~1011 W cm−2. In the gas phase, the...

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Veröffentlicht in:Laser physics 2018-02, Vol.28 (2), p.26002
Hauptverfasser: Laptev, V B, Chekalin, S V, Dorofeyev, I A, Kompanets, V O, Pigulsky, S V, Ryabov, E A
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Sprache:eng
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Zusammenfassung:We have found and studied a phenomenon of the growth of films resulting from decomposition of some organic and silicon-containing molecules adsorbed on the surface of ionic crystals under the action of IR (1.4-5.4 µm) femtosecond radiation of a moderate intensity, ~1011 W cm−2. In the gas phase, these molecules do not decompose. Microstructured films consisting of amorphous carbon, graphite oxide, and silicon dioxide have been obtained. The formation of carbon films was accompanied by the appearance of different hydrocarbons in the gas phase. The extensive films of graphite oxide have been obtained. The decomposition of molecules on the surface is apparently caused by non-resonant ionization and subsequent deep fragmentation. The mechanisms of ionization at relatively low intensities of the femtosecond IR radiation have been discussed.
ISSN:1054-660X
1555-6611
DOI:10.1088/1555-6611/aa980d