Design analysis of 4H-SiC MOSFET for high power application

Silicon Carbide has emerged as a promising candidate due to its superior material properties such as high breakdown voltage, wide bandgap, and high thermal conductivity. A new dual channel trench-based high power MOSFET (DTMOS) on 4H-SiC is presented. The DTMOS device features two trenches, each containing a poly-Si gate positioned on opposite sides of the P-base region. This configuration results in two parallel channels within the device. The unique design of the DTMOS leverages the RESURF effect and parallel conduction of the drive current, leading to notable performance improvements. The AC and DC characteristics of the DTMOS are analyzed and compared with PRMOS using 2D simulations. The results demonstrate the superior performance of the DTMOS compared to the PRMOS. Specifically, the DTMOS exhibits 2.35 times higher drive current, an 88% enhancement in gain, 52% higher breakdown voltage, an 11% reduction in threshold potential, a 43% decrease in on-resistance, and 5.55 times higher FOM compared to the PRMOS.