Effect of Zn addition and Ti doping position on the diffusion reaction of internal tin Nb3Sn conductors

Addition of Zn to a Cu matrix during Cu-Zn/Sn interdiffusion reactions at 400 °C leads to the formation of a solid ternary Cu-Zn-Sn phase, β-CuZn, at the outermost reaction layer next to the porous phase. The use of a brass matrix considerably suppresses void formation and promotes homogeneous outward Sn diffusion in pre-annealing, prior to Nb3Sn formation. There are exactly three paths for Ti doping in the internal tin process, i.e. doping to Sn cores, Nb filaments, and Cu matrix. Ti doping to Sn cores causes a Ti-rich layer formation at the boundary of the Nb filament pack; however, no Ti-rich layers are formed as a result of small Ti doping to the matrix and to Nb filaments. The absence of Ti-rich layers is believed to contribute to a smooth Sn diffusion and suppression of void growth. Atom probe tomography measurements reveal that Ti doping to Sn cores leads to a more inhomogeneous Ti distribution near the grain boundary and a larger variation of the grain boundary thickness than doping to Nb filaments, which may contribute to a better Sn grain boundary diffusion. It is concluded that Ti doping to the matrix, instead of doping to Sn cores, might be more effective in maintaining better growth kinetics of Nb3Sn.