Ultrashort channel MoSe2 transistors with selenium atoms replaced at the interface: first-principles quantum-transport study

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Veröffentlicht in:	Nanotechnology 2024-04, Vol.35 (17)
Hauptverfasser:	Chung, Chih-Hung, Chen, Ting-Yu, Lin, Chiung-Yuan, Chien, Huang-Wei
Format:	Artikel
Sprache:	eng
Schlagworte:	contact resistance molecular dynamics MoSe quantum transport selenium replacement
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container_title	Nanotechnology
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creator	Chung, Chih-Hung Chen, Ting-Yu Lin, Chiung-Yuan Chien, Huang-Wei
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doi_str_mv	10.1088/1361-6528/ad1afa
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source	IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects	contact resistance molecular dynamics MoSe quantum transport selenium replacement
title	Ultrashort channel MoSe2 transistors with selenium atoms replaced at the interface: first-principles quantum-transport study
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