Enhancement of transport properties in single ZnSe nanowire field-effect transistors

Wide-gap semiconductors are excellent candidates for next-generation optoelectronic devices, including tunable emitters and detectors. ZnSe nanowire-based devices show great promise in blue emission applications, since they can be easily and reproducibly fabricated. However, their utility is limited...

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Veröffentlicht in:	Nanotechnology 2019-02, Vol.30 (5), p.054007-054007
Hauptverfasser:	Wisniewski, David, Byrne, Kristopher, de Souza, Christina F, Fernandes, Carlos, Ruda, Harry E
Format:	Artikel
Sprache:	eng
Schlagworte:	carrier mobility carrier transport crystal defects electrical resistivity II-VI semiconductors nanowires photoluminescence
Online-Zugang:	Volltext
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