Temperature-dependent characteristics of Schottky barrier diode on heterogeneous β-Ga2O3( 2ˉ01)-Al2O3-Si Substrate

We report the β-Ga2O3( 2ˉ01)/TiN Schottky barrier diode (SBD) on heterogeneous integrated Ga2O3-Al2O3-Si (GaOISi) substrate. The interface performance of GaOISi/TiN SBD and its dependence on the ambient temperature (Tamb) are characterized. The measured capacitance (C) versus voltage (V) curves are not influenced by the frequency and the ambient temperature, which indicate a stable interface between Ga2O3 and TiN. The SBD on GaOISi demonstrates a high on-state to off-state current (ION/IOFF) ratio of 1011, a low RON of 6.7 mΩ⋅cm2, and an on-set voltage full switch-on voltage Von of ∼1.1 V. As the temperature increases from 25 °C to 130 °C, the GaOISi/TiN SBD exhibits a stable ION/IOFF ratio. Based on the thermionic emission model, the extracted φB,eff decreases from 0.92 to 0.75 eV with the increasing of temperature, which leads to a reduction of Von.