Memristive resistive switch based on spontaneous barrier creation in metal-chalcogenide junctions

Electrically induced resistive switching resulting from ionic transport and electrochemical redox reactions is promising for future generation non-volatile memory devices and artificial neural computing. The key ingredient for the highly efficient neural computing in this context is a memristor, whi...

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Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 2019-09, Vol.52 (38), p.385101
Hauptverfasser:	Takagaki, Y, Ramsteiner, M, Jahn, U, Jenichen, B, Trampert, A
Format:	Artikel
Sprache:	eng
Schlagworte:	chalcogenides memristor resistive switch
Online-Zugang:	Volltext
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