Memristive resistive switch based on spontaneous barrier creation in metal-chalcogenide junctions

Electrically induced resistive switching resulting from ionic transport and electrochemical redox reactions is promising for future generation non-volatile memory devices and artificial neural computing. The key ingredient for the highly efficient neural computing in this context is a memristor, whi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of physics. D, Applied physics Applied physics, 2019-09, Vol.52 (38), p.385101
Hauptverfasser: Takagaki, Y, Ramsteiner, M, Jahn, U, Jenichen, B, Trampert, A
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Electrically induced resistive switching resulting from ionic transport and electrochemical redox reactions is promising for future generation non-volatile memory devices and artificial neural computing. The key ingredient for the highly efficient neural computing in this context is a memristor, which is a special type of a resistive two-terminal element whose electrical properties depend on not only the state of the element but also how the state has been achieved in its history. Memristor characteristics are demonstrated in a bilayer junction of Al and a Bi-Cu-S alloy utilizing electrically reversible generation of an insulating interface. The high resistance due to the interface layer drops abruptly by orders of magnitude when the barrier is annihilated electrochemically under a bias. The barrier is made to be robust by applying a reverse bias, giving rise to a controllable memory effect on the switching phenomenon. The switching mechanism based on the manipulation of a barrier, which is complementary to conventional bridging conductive filaments, will open the way for new functionalities as device elements.
ISSN:0022-3727
1361-6463
DOI:10.1088/1361-6463/ab2cbb