Memristive resistive switch based on spontaneous barrier creation in metal-chalcogenide junctions
Electrically induced resistive switching resulting from ionic transport and electrochemical redox reactions is promising for future generation non-volatile memory devices and artificial neural computing. The key ingredient for the highly efficient neural computing in this context is a memristor, whi...
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Veröffentlicht in: | Journal of physics. D, Applied physics Applied physics, 2019-09, Vol.52 (38), p.385101 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Electrically induced resistive switching resulting from ionic transport and electrochemical redox reactions is promising for future generation non-volatile memory devices and artificial neural computing. The key ingredient for the highly efficient neural computing in this context is a memristor, which is a special type of a resistive two-terminal element whose electrical properties depend on not only the state of the element but also how the state has been achieved in its history. Memristor characteristics are demonstrated in a bilayer junction of Al and a Bi-Cu-S alloy utilizing electrically reversible generation of an insulating interface. The high resistance due to the interface layer drops abruptly by orders of magnitude when the barrier is annihilated electrochemically under a bias. The barrier is made to be robust by applying a reverse bias, giving rise to a controllable memory effect on the switching phenomenon. The switching mechanism based on the manipulation of a barrier, which is complementary to conventional bridging conductive filaments, will open the way for new functionalities as device elements. |
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ISSN: | 0022-3727 1361-6463 |
DOI: | 10.1088/1361-6463/ab2cbb |