The influence of waveguide doping on the output characteristics of AlGaAs/GaAs lasers

The influence of waveguide doping on the output characteristics of AlGaAs/GaAs lasers

The influence of doping of waveguide layers on the output characteristics of lasers based on AlGaAs/GaAs double separate-confinement heterostructures is analysed. The heterostructures with narrow and broadened waveguides are studied. Samples of laser diode bars with undoped and doped waveguide layer...

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Veröffentlicht in:Quantum electronics (Woodbury, N.Y.) N.Y.), 2020-05, Vol.50 (5), p.489-492
Hauptverfasser: Telegin, K.Yu, Ladugin, M.A., Andreev, A.Yu, Yarotskaya, I.V., Volkov, N.A., Padalitsa, A.A., Lobintsov, A.V., Aparnikov, A.N., Sapozhnikov, S.M., Marmalyuk, A.A.
Format: Artikel
Sprache:eng
Schlagworte:
ALUMINIUM ARSENIDES
Aluminum gallium arsenides
ATOMIC AND MOLECULAR PHYSICS
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
COMPARATIVE EVALUATIONS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CONFINEMENT
CONTROL
DOPED MATERIALS
Doping
Engineering
Engineering, Electrical & Electronic
Gallium arsenide
Gallium arsenide lasers
GALLIUM ARSENIDES
Heterostructures
laser diode bar
LASER RADIATION
LASERS
LAYERS
output power
Physical Sciences
Physics
Physics, Applied
Quantum Science & Technology
Science & Technology
semiconductor laser
Semiconductor lasers
Technology
waveguide
WAVEGUIDES
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Beschreibung
Zusammenfassung:The influence of doping of waveguide layers on the output characteristics of lasers based on AlGaAs/GaAs double separate-confinement heterostructures is analysed. The heterostructures with narrow and broadened waveguides are studied. Samples of laser diode bars with undoped and doped waveguide layers are experimentally fabricated and compared. It is shown that the latter type of structures with a broadened waveguide allows one to increase the output power of the laser diode bars by 10 % - 15 %, all other conditions being equal.
ISSN:1063-7818
1468-4799
DOI:10.1070/QEL17249