Defectoscopy of ZnGeP2 single crystals using a strontium vapour laser
A modified method of optical defectoscopy of ZnGeP2 single crystal plates using a strontium vapour laser (λ = 1.03 and 1.09 μm) is proposed based on shadow imaging of internal defects in plates cut parallel to the (100) plane. It is shown that the use of a strontium vapour laser with a wavelength of...
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Veröffentlicht in: | Quantum electronics (Woodbury, N.Y.) N.Y.), 2018-05, Vol.48 (5), p.491-494 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A modified method of optical defectoscopy of ZnGeP2 single crystal plates using a strontium vapour laser (λ = 1.03 and 1.09 μm) is proposed based on shadow imaging of internal defects in plates cut parallel to the (100) plane. It is shown that the use of a strontium vapour laser with a wavelength of 6.45 mm makes it possible to study inhomogeneities in large-size ZnGeP2 samples. The possibility of fabricating a projection defectoscope for monitoring breakdown development in ZnGeP2 crystals is considered. |
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ISSN: | 1063-7818 1468-4799 |
DOI: | 10.1070/QEL16507 |