Defectoscopy of ZnGeP2 single crystals using a strontium vapour laser

A modified method of optical defectoscopy of ZnGeP2 single crystal plates using a strontium vapour laser (λ = 1.03 and 1.09 μm) is proposed based on shadow imaging of internal defects in plates cut parallel to the (100) plane. It is shown that the use of a strontium vapour laser with a wavelength of...

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Veröffentlicht in:Quantum electronics (Woodbury, N.Y.) N.Y.), 2018-05, Vol.48 (5), p.491-494
Hauptverfasser: Gribenyukov, A.I., Podzyvalov, S.N., Soldatov, A.N., Shumeiko, A.S., Yudin, N.A., Yudin, N.N., Yurin, V.Yu
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Sprache:eng
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Zusammenfassung:A modified method of optical defectoscopy of ZnGeP2 single crystal plates using a strontium vapour laser (λ = 1.03 and 1.09 μm) is proposed based on shadow imaging of internal defects in plates cut parallel to the (100) plane. It is shown that the use of a strontium vapour laser with a wavelength of 6.45 mm makes it possible to study inhomogeneities in large-size ZnGeP2 samples. The possibility of fabricating a projection defectoscope for monitoring breakdown development in ZnGeP2 crystals is considered.
ISSN:1063-7818
1468-4799
DOI:10.1070/QEL16507