Simulation of power - current characteristics of high-power semiconductor lasers emitting in the range

We report the simulation of power - current characteristics of high-power semiconductor lasers emitting in the range . A technique is described which allows one to determine the thermal resistance and characteristic temperatures of a laser diode. The radiative and nonradiative carrier recombination...

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Veröffentlicht in:	Quantum electronics (Woodbury, N.Y.) N.Y.), 2014-02, Vol.44 (2), p.149-156
Hauptverfasser:	Gorlachuk, P.V., Ivanov, A.V., Kurnosov, V.D., Kurnosov, K.V., Romantsevich, V.I., Simakov, V.A., Chernov, R.V.
Format:	Artikel
Sprache:	eng
Schlagworte:	power - current characteristic radiative and nonradiative carrier recombination spectral range 1.5 - 1.55 μm thermal resistance
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	We report the simulation of power - current characteristics of high-power semiconductor lasers emitting in the range . A technique is described which allows one to determine the thermal resistance and characteristic temperatures of a laser diode. The radiative and nonradiative carrier recombination rates are evaluated. Simulation results are shown to agree well with experimental data.
ISSN:	1063-7818 1468-4799
DOI:	10.1070/QE2014v044n02ABEH015251