Influence of the axicon characteristics and beam propagation parameter on the formation of Bessel beams from semiconductor lasers

We study the peculiarities of the formation of Bessel beams in semiconductor lasers with a high propagation parameter . It is shown that the propagation distance of the Bessel beam is determined by the divergence of the quasi-Gaussian beam with high rather than the geometric parameters of the optical scheme. It is demonstrated that technologically inevitable rounding of the axicon tip leads to a significant increase in the transverse dimension of the central part of the Bessel beam near the axicon.