Electron transport in liquid silicon and germanium

We report on the electrical resistivity and thermoelectric power of liquid Si and Ge. The basic ingredients of the calculations are obtained by using a variational procedure based on a third-order perturbation theory. In the calculations we employ an on-Fermi-sphere model potential suitable for these systems. The reference structure factors used in the final calculations are obtained by introducing softness in the hard-sphere description of the structure factors through a scaling procedure. The calculated resistivities and thermoelectric power are comparable to the experimental as well as to the available theoretical results.