Influence of surfaces on the dielectric properties and leakage currents in paraelectric (Pb0.72La0.28)TiO3 thin films

In the voltage range of 0-30 V, dielectric and leakage current density (J L ) behavior were studied in paraelectric (Pb,La)TiO 3 or PLT thin films (0.1 −0.36 μm) with bulk resistivity of 5.6×10 8 Ω-cm. With Pt electrodes, the properties were found to be contact dominated. With both top and bottom Pt electrodes, the interfacial capacitance (C i and the built-in voltage (V bi ) of the Schottky barrier were 380 pF and 1.3 V, respectively. A log-log plot of J L vs V exhibit slope of ∼1 and 9, respectively, in the range of V