Materials interactions in the integration of PZT ferroelectric capacitors

Materials interactions in the integration of PZT ferroelectric capacitors

Investigations of materials interactions that complicate the integration of PZT ferroelectric capacitors into CMOS technologies are discussed. These include interactions within the Pt/Ti electrodes structure, the reactions of sol-gel deposited PZT during crystallization with various underlying diele...

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Veröffentlicht in:Integrated ferroelectrics 1995-01, Vol.6 (1-4), p.81-92
Hauptverfasser: Jones, R. E., Maniar, P. D., Campbell, A. C., Moazzami, R., Dupuie, J. L., Gregory, R. B., Kottke, M. L., Bozack, M. L., Williams, J. R., Ferrero, J. M.
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Sprache:eng
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Zusammenfassung:Investigations of materials interactions that complicate the integration of PZT ferroelectric capacitors into CMOS technologies are discussed. These include interactions within the Pt/Ti electrodes structure, the reactions of sol-gel deposited PZT during crystallization with various underlying dielectrics (SiO 2 , Si 3 N 4 , Al 2 O 3 , and TiO 2 ), and the impact of other integrated circuit processes on fabricated capacitors.
ISSN:1058-4587
1607-8489
DOI:10.1080/10584589508019355