Electrodes for ferroelectric thin films
Platinum and ruthenium oxide (RuO 2 ) deposited by ion beam sputter-deposition are evaluated for use as electrodes for PZT thin film capacitors. The effect of deposition temperature, film thickness, and the presence of oxygen on hillock formation in platinum is discussed. It is shown that the hilloc...
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| Veröffentlicht in: | Integrated ferroelectrics 1993-12, Vol.3 (4), p.321-332 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | Platinum and ruthenium oxide (RuO
2
) deposited by ion beam sputter-deposition are evaluated for use as electrodes for PZT thin film capacitors. The effect of deposition temperature, film thickness, and the presence of oxygen on hillock formation in platinum is discussed. It is shown that the hillock density in Pt/Ti/SiO
2
/Si films can be significantly reduced by properly controlling the processing conditions and film thickness. Stress measurements correlate with the experimental observation that depositing thinner platinum films ( |
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| ISSN: | 1058-4587 1607-8489 |
| DOI: | 10.1080/10584589308216687 |