Interaction of beryllium with molecular and ion deuterium. deuterium retention in the codeposited beryllium/deuterium layer

The study of the surface and bulk processes (retention, oxide layers effects, sputtering, implantation defects formation in the ion stopping region, codeposition) is very important for the prediction of the hydrogen isotopes inventory in the plasma facing materials (PFM). This work presents the results of the SIMS studies after gas phase saturation and implantation, preferential sputtering of the beryllium oxide films by the D + and He + ions, and the ERD measurements of the Be/D codeposition. The deuterium retention in beryllium after gas phase saturation (1 Pa, 575 K) and 5 keV D + bombardment at temperature 375 K were studied by the SIMS method. The deuterium depth distribution is presented for the implantation case. Sputtering of the beryllium oxide films by the D + and He + ions was compared. The Be oxide films preferential is sputtered during the deuterium ions bombardment. Beryllium deposition to the glass plate was performed in a Penning discharge cell in pure D-Kr atmosphere and in the D-Kr gas mixture at the deuterium pressure 10 −2 Pa. Codeposited at the 250 K, 300 K and 375 K Be/D layers were studied by ERD technique.