Defect assisted intrinsic luminescence in Al2O3 crystals
The origin of the luminescence bands at 7.5 eV anv 3.8 eV appearing additionaly to the luminescence of F- and F + - centres in pure Al 2 O 3 are investigated. The time - resolved luminescence spectra, absorption and luminescence excitation spectra as well as trap spectroscopy data depending on devia...
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| Veröffentlicht in: | Radiation effects and defects in solids 1991-01, Vol.119-121 (2), p.963-968 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The origin of the luminescence bands at 7.5 eV anv 3.8 eV appearing additionaly to the luminescence of F- and F
+
- centres in pure Al
2
O
3
are investigated. The time - resolved luminescence spectra, absorption and luminescence excitation spectra as well as trap spectroscopy data depending on deviation from the stochiometry of crystals are discussed in terms of self - trapping of excitons in two configurations. The role of defects due to annihilation of excitons is considered. |
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| ISSN: | 1042-0150 1029-4953 |
| DOI: | 10.1080/10420159108220850 |