Studies of lattice positions and ranges of nitrogen, implanted into metals and AIIIBV crystals

The nuclear reactions 15 N(p,αγ) 12 C and 15 N(p,α) 12 C were used to determine the location and depth distributions of the implanted 15 N atoms in InP, InAs and InSb semiconductors. The behaviour of the implanted nitrogen atoms durings thermal treatment was also investigated. The yieldsof the 15 N(p, αγ) 12 C reaction were measured to determine the projected range of 15 N in A III B V . Nb. Ni, Zr Materials. The universal relation between the modified reduced range and the average reduced energy has been obtained for A III B V compounds. Measured are the orientational and energy dependences of the γ-ray yield from the 15 N(p, αγ) 12 C reaction excited by channeled protons in a Nb crystal. The obtained results show the shift of the maximum in the reaction yield distribution and the decrease ofthe full distribution width measured at half-maximum.