Structural transformation of the (233)\[011], Sigma= 11 tilt grain boundaries in germanium and silicon

In a previous paper, observations of the high-temperature and the low temperature phases of the (233)\[011], Sigma= 11 symmetrical tilt grain boundary (GB) in silicon at 1470K (Sigma=11B) and 1220K (Sigma=11A) after deformation of a (122)[011],Sigma=9 GB were reported by Putaux and Thibault-Desseaux...

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Veröffentlicht in:Philosophical magazine letters 1996-01, Vol.73 (1), p.5-10
1. Verfasser: Elkajbaji, Mohamed
Format: Artikel
Sprache:eng
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Zusammenfassung:In a previous paper, observations of the high-temperature and the low temperature phases of the (233)\[011], Sigma= 11 symmetrical tilt grain boundary (GB) in silicon at 1470K (Sigma=11B) and 1220K (Sigma=11A) after deformation of a (122)[011],Sigma=9 GB were reported by Putaux and Thibault-Desseaux. The present letter describes the direct transformation of the (233)[011],Sigma=11 GB in a Sigma=11 germanium bicrystal. Silicon and germanium give contradictory results.
ISSN:0950-0839
1362-3036
DOI:10.1080/095008396181046