Study of semiconductor lasers under simultaneous uniaxial stress and hydrostatic pressure

Study of semiconductor lasers under simultaneous uniaxial stress and hydrostatic pressure

We present the design of a device for the simultaneous application of uniaxial stress and hydrostatic pressure. This new apparatus will for the first time allow measurements at constant strain. Results of the simultaneous application of uniaxial stress and hydrostatic pressure to a semiconductor las...

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Veröffentlicht in:High pressure research 2000-09, Vol.18 (1-6), p.41-48
Hauptverfasser: Hochheimer, H. D., Widulle, F., Held, J. Th, Strehl, G., Kotitschke, R. T., Adams, A. R.
Format: Artikel
Sprache:eng
Schlagworte:
hydrostatic pressure
semiconductor lasers
Uniaxial stress
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Zusammenfassung:We present the design of a device for the simultaneous application of uniaxial stress and hydrostatic pressure. This new apparatus will for the first time allow measurements at constant strain. Results of the simultaneous application of uniaxial stress and hydrostatic pressure to a semiconductor laser are presented and discussed.
ISSN:0895-7959
1477-2299
DOI:10.1080/08957950008200946